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K4F641612E - (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM

Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. CMOS DRAM.

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Datasheet Details

Part number K4F641612E
Manufacturer Samsung
File Size 445.72 KB
Description (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM
Datasheet download datasheet K4F641612E Datasheet
Additional preview pages of the K4F641612E datasheet.

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( DataSheet : www.DataSheet4U.com ) Industrial Temperature K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
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