• Part: K4H510838G
  • Description: 512Mb G-die DDR SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 373.04 KB
K4H510838G Datasheet (PDF) Download
Samsung Semiconductor
K4H510838G

Key Features

  • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
  • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • DLL aligns DQ and DQS transition with CK transition
  • MRS cycle with address key programs
  • Burst type (sequential & interleave)
  • All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
K4H510838G datasheet preview

Datasheets by Manufacturer

Part Number Manufacturer Description
K4H510838A-TCA0 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838A-TCA2 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838A-TLA2 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838B-TLB0 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838C-TCA2 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838C-TCB0 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838C-TLA0 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838C-TLA2 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838D-TCA0 Samsung Semiconductor 128Mb DDR SDRAM
K4H510838D-TCB0 Samsung Semiconductor 128Mb DDR SDRAM