K4M28163LH - Mobile SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4M28163LH
Manufacturer	Samsung semiconductor
File Size	140.31 KB
Description	Mobile SDRAM
Datasheet	K4M28163LH Datasheet
Additional preview pages of the K4M28163LH datasheet.

Product details

Description

The K4M28163LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Published: Apr 13, 2007 |