Datasheet Summary
- R(B)N/G/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Features
- 2.5V power supply.
- LVCMOS patible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
- EMRS cycle with address key programs.
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) -. DS (Driver Strength)
- DQM for masking.
- Auto refresh.
- -
- - 64ms refresh period (4K cycle)....
