K4S280432F-UL75 Datasheet PDF - Samsung semiconductor 128Mb F-die SDRAM Specs

K4S280432F-UL75 - 128Mb F-die SDRAM

This page provides the datasheet information for the K4S280432F-UL75, a member of the K4S281632F-Uxx 128Mb F-die SDRAM family.

Datasheet Summary

Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

Datasheet Details

Part number	K4S280432F-UL75
Manufacturer	Samsung semiconductor
File Size	174.13 KB
Description	128Mb F-die SDRAM
Datasheet	K4S280432F-UL75 Datasheet
Additional preview pages of the K4S280432F-UL75 datasheet.

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Full PDF Text Transcription

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SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww August 2004 heet4U.com* Samsung Electronics reserves the right to change products or specification without notice. www.DataSRev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) • Added Note 5. sentense of tRDL parameter. Revision 1.2 (August, 2004) • Corrected typo. CMOS SDRAM Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.

Published: Sep 12, 2015 |