K4S281632B-TC10
Description
The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Key Features
- Burst length (1, 2, 4, 8 & Full page)
- Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM
