K4S281632B-TL80 datasheet by Samsung Semiconductor.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | K4S281632B-TL80 |
|---|---|
| Datasheet | K4S281632B-TL80 K4S Datasheet (PDF) |
| File Size | 108.47 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to...
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K4S281632B-TL10 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TL1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TL1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TL75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC10 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-TC80 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632B-N | 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP |
