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K4S281632B

Manufacturer: Samsung Semiconductor

K4S281632B datasheet by Samsung Semiconductor.

K4S281632B datasheet preview

K4S281632B Datasheet Details

Part number K4S281632B
Datasheet K4S281632B_Samsungsemiconductor.pdf
File Size 108.47 KB
Manufacturer Samsung Semiconductor
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B page 2 K4S281632B page 3

K4S281632B Overview

The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to...

K4S281632K from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Samsung Logo K4S281632K 128Mb K-die SDRAM Samsung
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP
K4S281632B-TC10 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TC1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TC1L 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TC75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TC80 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TL10 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TL1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TL1L 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-TL75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

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