Download K4S281632D-L60 Datasheet PDF
K4S281632D-L60 page 2
Page 2
K4S281632D-L60 page 3
Page 3

K4S281632D-L60 Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Seque
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM for masking
  • Auto & self refresh

K4S281632D-L60 Description

The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to...

K4S281632D-L60 Applications

  • Samsung Electronics reserves the right to change products or specification without notice