Samsung semiconductor K4S281632D-TC75
The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.| Part No. | K4S281632D-TC75 |
|---|---|
| Datasheet | K4S281632D-TC75 Download |
| Manufacturer |  Samsung semiconductor |
| Description | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| Buy | Stock & Price |
FEATURES
● JEDEC standard 3.3V power supply● LVTTL compatible with multiplexed address
● Four banks operation
● MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock.
● Burst read single-bit write operation
● DQM for masking
● Auto & self refresh
● 64ms refresh period (4K cycle) Part No. K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L7C K4S281632D-TC/L75 K4S281632D-TC/L1H K4S281632D-TC/L1L CMOS SDRAM
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Max Freq. 183MHz(CL=3) 166MHz(CL=3) 133MHz(CL=2) 133MHz(CL=3) 100...
