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K4S281632E-TC75 - 128Mb E-die SDRAM Specification

Download the K4S281632E-TC75 datasheet PDF. This datasheet also covers the K4S variant, as both devices belong to the same 128mb e-die sdram specification family and are provided as variant models within a single manufacturer datasheet.

Description

The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for maskin.
  • Auto & self refresh.
  • 64ms refresh per.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S-281632.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4S281632K 128Mb K-die SDRAM Samsung
K4S280832B 128M-bit SDRAM Samsung Electronics
K4S1G0632D SDRAM stacked 1Gb D-die Samsung Electronics
K4S1G0732D SDRAM stacked 1Gb D-die Samsung Electronics
K4S510432D 512Mb D-die SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4S281632E-TC60 128Mb E-die SDRAM Specification
K4S281632E-TL60 128Mb E-die SDRAM Specification
K4S281632E-TL75 128Mb E-die SDRAM Specification
K4S281632B 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.0 (Nov. 2002) - First release. CMOS SDRAM Revision 1.1 (Apr. 2003) - x4/x8/x16 Merged spec. Revision 1.2 (May. 2003) - Delete -TC(L)7C Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -.
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