K4S281632E-TL60
Description
The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Key Features
- JEDEC standard 3.3V power supply
- Four banks operation
- MRS cycle with address key programs -. CAS latency (2 &
- Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- DQM (x4,x8) & L(U)DQM (x16) for maskin
- Auto & self refresh
- 64ms refresh period (4K Cycle)
