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K4S281632F-Txx

Manufacturer: Samsung Semiconductor

K4S281632F-Txx datasheet by Samsung Semiconductor.

K4S281632F-Txx datasheet preview

K4S281632F-Txx Datasheet Details

Part number K4S281632F-Txx
Datasheet K4S281632F-Txx_Samsungsemiconductor.pdf
File Size 169.29 KB
Manufacturer Samsung Semiconductor
Description 128Mb F-die SDRAM
K4S281632F-Txx page 2 K4S281632F-Txx page 3

K4S281632F-Txx Overview

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S281632F-Txx Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Seque
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (4K Cycle)

K4S281632K from other manufacturers

View K4S281632K datasheet index

Brand Logo Part Number Description Other Manufacturers
Samsung Logo K4S281632K 128Mb K-die SDRAM Samsung
Samsung Semiconductor logo - Manufacturer

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