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K4S281632F-Txx Datasheet 128mb F-die Sdram

Manufacturer: Samsung Semiconductor

Overview: SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 t e e h S a t a .D w Revision 1.1 w February 2004 w * Samsung Electronics reserves the right to change products or specification without notice. m o .c U 4 t e e h S a at February 2004 Rev. 1.1 .D w w w SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 0.0 (Agust, 2003) - First release. Revision 0.1 (November, 2003) - pleted DC characteristics. Revision 0.2 (November, 2003) - Preliminary spec release. Revision 1.0 (January, 2004) - Revision 1.0 spec release. - Modified ICC4 current from 110mA -> 140mA at x16 - Modified tSH from 0.8ns -> 1.0ns at 166MHz. Revision 1.1 (February, 2004) - Corrected typo. CMOS SDRAM Rev. 1.

General Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung Logo K4S281632K 128Mb K-die SDRAM Samsung

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