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K4S510432B-TC

K4S510432B-TC is 512Mb B-die SDRAM Specification manufactured by Samsung Semiconductor.
K4S510432B-TC datasheet preview

K4S510432B-TC Datasheet

Part number K4S510432B-TC
Download K4S510432B-TC Datasheet (PDF)
File Size 149.53 KB
Manufacturer Samsung Semiconductor
Description 512Mb B-die SDRAM Specification
K4S510432B-TC page 2 K4S510432B-TC page 3

Similar Part Number

Manufacturer Part Number Description
Samsung Logo Samsung Semiconductor K4S510432D 512Mb D-die SDRAM

K4S510432B-TC Distributor

K4S510432B-TC Description

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S510432B-TC Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Inte
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (8K Cycle)

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