Datasheet Summary
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
- Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.1 February 2004
SDRAM 512Mb B-die (x4, x8, x16)
Revision History
Revision 1.0 (January, 2004)
- First release. Revision 1.1 (February, 2004)
- Corrected typo.
CMOS SDRAM
Rev. 1.1 February 2004
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks SDRAM
Features
- JEDEC standard 3.3V power supply
- LVTTL patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs -. CAS latency (2 & 3) -....
