K4S51153LF Overview
The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device...
K4S51153LF Key Features
- VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V
- LVCMOS patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type
- EMRS cycle with address key programs
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh)
- DQM for masking
- Auto refresh