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K4S51163PF-F90 - 8M x 16Bit x 4 Banks Mobile-SDRAM

General Description

The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S51163PF-F1L 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-Y 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-YF 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S511632B-TC75 512Mb B-die SDRAM Specification
K4S511632B-TCL75 512Mb B-die SDRAM Specification

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • 1 /CS Support. • 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).