K4S51323LF-MEF - 4M x 32Bit x 4 Banks Mobile SDRAM

This page provides the datasheet information for the K4S51323LF-MEF, a member of the K4S51323LF-MC 4M x 32Bit x 4 Banks Mobile SDRAM family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K4S51323LF-MEF
Manufacturer	Samsung semiconductor
File Size	172.62 KB
Description	4M x 32Bit x 4 Banks Mobile SDRAM
Datasheet	K4S51323LF-MEF Datasheet
Additional preview pages of the K4S51323LF-MEF datasheet.

K4S51323LF-MEF Product details

Description

The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support.

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Other Datasheets by Samsung semiconductor

K4S51323LF-MEC - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEL - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MC - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MF - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-ML - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S513233F-MC - Mobile SDRAM
K4S513233F-MEC - Mobile SDRAM
K4S513233F-MEF - Mobile SDRAM

Published: Apr 12, 2010 |