K4S560832E-NCL75 - SDRAM 256Mb E-die

This page provides the datasheet information for the K4S560832E-NCL75, a member of the K4S560432E-NC SDRAM 256Mb E-die family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K4S560832E-NCL75
Manufacturer	Samsung semiconductor
File Size	207.41 KB
Description	SDRAM 256Mb E-die
Datasheet	K4S560832E-NCL75 Datasheet
Additional preview pages of the K4S560832E-NCL75 datasheet.

K4S560832E-NCL75 Product details

Description

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

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Other Datasheets by Samsung semiconductor

K4S560832E-NC75 - SDRAM 256Mb E-die
K4S560832E-TC75 - 256Mb E-die SDRAM Specification
K4S560832E-TL75 - 256Mb E-die SDRAM Specification
K4S560832A - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832C - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832D - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S560832J - 256Mb J-die SDRAM Specification

Published: Sep 3, 2015 |