K4S560832E-TL75
Description
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology.
Key Features
- JEDEC standard 3.3V power supply
- Four banks operation
- MRS cycle with address key programs -. CAS latency (2 &
- Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- DQM (x4,x8) & L(U)DQM (x16) for masking
- Auto & self refresh
- 64ms refresh period (8K Cycle)
