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K4S561632E-NCL75

K4S561632E-NCL75 is SDRAM 256Mb E-die manufactured by Samsung Semiconductor.
K4S561632E-NCL75 datasheet preview

K4S561632E-NCL75 Datasheet

Part number K4S561632E-NCL75
Download K4S561632E-NCL75 Datasheet (PDF)
File Size 207.41 KB
Manufacturer Samsung Semiconductor
Description SDRAM 256Mb E-die
K4S561632E-NCL75 page 2 K4S561632E-NCL75 page 3

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K4S561632E-NCL75 Distributor

K4S561632E-NCL75 Description

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S561632E-NCL75 Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
  • CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (8K Cycle)

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