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K4S561632E-TC75 Datasheet

Manufacturer: Samsung Semiconductor
K4S561632E-TC75 datasheet preview

Datasheet Details

Part number K4S561632E-TC75
Datasheet K4S561632E-TC75_Samsungsemiconductor.pdf
File Size 198.76 KB
Manufacturer Samsung Semiconductor
Description 256Mb E-die SDRAM Specification
K4S561632E-TC75 page 2 K4S561632E-TC75 page 3

K4S561632E-TC75 Overview

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S561632E-TC75 Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Seque
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (8K Cycle)
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K4S561632E-NC75 SDRAM 256Mb E-die
K4S561632E-NCL60 SDRAM 256Mb E-die
K4S561632E-NCL75 SDRAM 256Mb E-die
K4S561632A 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S561632B 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S561632D 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

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