K4S56163LF-XG Datasheet PDF (4M x 16Bit x 4 Banks Mobile SDRAM) | Download Samsung semiconductor K4S56163LF-XG

K4S56163LF-XG - 4M x 16Bit x 4 Banks Mobile SDRAM

This page provides the datasheet information for the K4S56163LF-XG, a member of the K4S56163LF-XE 4M x 16Bit x 4 Banks Mobile SDRAM family.

Description

The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

Datasheet Details

Part number	K4S56163LF-XG
Manufacturer	Samsung semiconductor
File Size	143.57 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4S56163LF-XG Datasheet
Additional preview pages of the K4S56163LF-XG datasheet.

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Full PDF Text Transcription

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K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (8K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls BOC with 0.

Published: Mar 25, 2010 |