K4S640832E-TC1H datasheet by Samsung Semiconductor.
| Part number | K4S640832E-TC1H |
|---|---|
| Datasheet | K4S640832E-TC1H_Samsungsemiconductor.pdf |
| File Size | 126.89 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
|
|
The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be...
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K4S640832E-TC1L | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832E-TC75 | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832E-TL1H | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832E-TL1L | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832E-TL75 | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832E | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832C | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832D | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832F | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832F-TC75 | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
