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K4S641632H-TL60 Datasheet 64mb H-die Sdram Specification

Manufacturer: Samsung Semiconductor

Overview: SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) • Target spec release CMOS SDRAM Revision 0.1 (July, 2003) • Preliminary spec release Revision 0.2 (August, 2003) • Modified IBIS characteristic. Revision 1.0 (September, 2003) • Finalized Revision 1.1 (September, 2003) • Corrected IBIS Specification. Revision 1.2 (October, 2003) • Deleted speed 7C at x4/x8. Revision 1.3 (October, 2003) • Deleted AC parameter notes 5. Revision 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

.

Rev.

1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms r.

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