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K4S641632H-UCL70 Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4S641632H-UCL70 datasheet preview

Datasheet Details

Part number K4S641632H-UCL70
Datasheet K4S641632H-UCL70 K4S641632H-UC60 Datasheet (PDF)
File Size 146.34 KB
Manufacturer Samsung Semiconductor
Description 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL70 page 2 K4S641632H-UCL70 page 3

K4S641632H-UCL70 Overview

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S641632H-UCL70 Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Seque
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (4K cycle)
  • Pb-free Package
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K4S641632H-UCL70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL75 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL75 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC75 64Mb H-die SDRAM Specification 54 TSOP-II

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