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K4T1G164QA-ZCE6 - 1Gb A-die DDR2 SDRAM Specification

This page provides the datasheet information for the K4T1G164QA-ZCE6, a member of the K4T1G164QA 1Gb A-die DDR2 SDRAM Specification family.

Datasheet Summary

Description

3.

4.

Rev.

Features

  • Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin.
  • 8 Banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Rea.

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Datasheet Details

Part number K4T1G164QA-ZCE6
Manufacturer Samsung semiconductor
File Size 654.56 KB
Description 1Gb A-die DDR2 SDRAM Specification
Datasheet download datasheet K4T1G164QA-ZCE6 Datasheet
Additional preview pages of the K4T1G164QA-ZCE6 datasheet.

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Full PDF Text Transcription

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1G A-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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