K4T51043QB-GCD5 Description
AC & DC Operating Conditions & Specifications Page 2 of 28 Rev. 1.5 July 2005 512Mb B-die DDR2 SDRAM 0. DDR2 SDRAM Package 60 FBGA 60 FBGA 60 FBGA 60 FBGA 84 FBGA 84 FBGA Note.
K4T51043QB-GCD5 Key Features
- JEDEC standard 1.8V ± 0.1V Power Supply
- VDDQ = 1.8V ± 0.1V
- 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin
- 4 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5
- Programmable Additive Latency: 0, 1 , 2 , 3 and 4
- Write Latency(WL) = Read Latency(RL) -1
- Burst Length: 4 , 8(Interleave/nibble sequential)
- Programmable Sequential / Interleave Burst Mode
K4T51043QB-GCD5 Applications
- Samsung Electronics reserves the right to change products or specification without notice