• Part: K4T51163QB-ZCD5
  • Description: 512Mb B-die DDR2 SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 633.79 KB
K4T51163QB-ZCD5 Datasheet (PDF) Download
Samsung Semiconductor
K4T51163QB-ZCD5

Key Features

  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature)
  • Off-Chip Driver(OCD) Impedance Adjustment
  • On Die Termination
  • Special Function Support -High Temperature Self-Refresh rate enable