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K4X1G163PC-FG

Manufacturer: Samsung Semiconductor

K4X1G163PC-FG datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4X1G163PC-FG datasheet preview

K4X1G163PC-FG Datasheet Details

Part number	K4X1G163PC-FG
Datasheet	K4X1G163PC-FG K4X1G163PC-L Datasheet (PDF)
File Size	564.86 KB
Manufacturer	Samsung Semiconductor
Description	Mobile DDR SDRAM

K4X1G163PC-FG Overview

K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM.

K4X1G163PC-FG Key Features

VDD/VDDQ = 1.8V/1.8V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
Differential clock inputs(CK and CK)
MRS cycle with address key programs
CAS Latency ( 3 )
Burst Length ( 2, 4, 8, 16 )
Burst Type (Sequential & Interleave)
EMRS cycle with address key programs

K4X1G163PE-FGC6 from other manufacturers

View K4X1G163PE-FGC6 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	K4X1G163PE-FGC6	64Mx16 Mobile DDR SDRAM	Samsung
	K4X1G163PE-FGC8	64Mx16 Mobile DDR SDRAM	Samsung

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number	Description
K4X1G163PC-FE	Mobile DDR SDRAM
K4X1G163PC-LE	Mobile DDR SDRAM
K4X1G163PC-LG	Mobile DDR SDRAM
K4X1G323PC-FE	32Mx32 Mobile DDR SDRAM
K4X1G323PC-FG	32Mx32 Mobile DDR SDRAM
K4X1G323PC-LE	32Mx32 Mobile DDR SDRAM
K4X1G323PC-LG	32Mx32 Mobile DDR SDRAM
K4X51163PC	32M x16 Mobile-DDR SDRAM
K4X51163PC-FE	32M x16 Mobile-DDR SDRAM
K4X51163PC-FG	32M x16 Mobile-DDR SDRAM

K4X1G163PC-FG Distributor