Part K4X51163PC-LG
Description 32M x16 Mobile-DDR SDRAM
Manufacturer Samsung Semiconductor
Size 255.84 KB
Samsung Semiconductor
K4X51163PC-LG

Overview

  • 1.8V power supply, 1.8V I/O power
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • 1 /CS
  • 1 CKE
  • Differential clock inputs(CK and CK)
  • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
  • Internal Temperature Compensated Self Refresh
  • Deep Power Down Mode