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K5A3280YBC-T855 Key Features

  • Power Supply voltage : 2.7V to 3.3V
  • Organization
  • Flash : 4,194,304 x 8 / 2,097,152 x 16 bit
  • SRAM : 1,048,576 x 8 / 524,288 x 16 bit
  • Access Time (@2.7V)
  • Flash : 70 ns, SRAM : 55 ns
  • Power Consumption (typical value)
  • Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program o
  • SRAM Operating Current : 22 mA Standby Current : 0.5 µA
  • Secode(Security Code) Block : Extra 64KB Block (Flash)

Related Samsung Semiconductor Datasheets

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K5A3280YTC-T855 MCP MEMORY
K5A3240YBC-T755 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3240YBC-T855 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

K5A3280YBC-T855 Description

The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which bines 32Mbit Dual Bank Flash and 8Mbit fCMOS SRAM. The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit. The memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase and program capability.