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K5A3340YBC-T755 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

Download the K5A3340YBC-T755 datasheet PDF. This datasheet also covers the K5A variant, as both devices belong to the same multi-chip package memory 32m bit (4mx8/2mx16) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K5A3x40YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 4Mbit fCMOS SRAM.

The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 4Mbit SRAM is organized as 512K x8 or 256K x16 bit.

Key Features

  • Power Supply voltage : 2.7V to 3.3V.
  • Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 524,288 x 8 / 262,144 x 16 bit.
  • Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns.
  • Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 20 mA Standby Current : 0.5 µA.
  • Secode(Security Code) Blo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K5A-3240.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number K5A3340YBC-T755
Manufacturer Samsung Semiconductor
File Size 867.47 KB
Description Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
Datasheet download datasheet K5A3340YBC-T755 Datasheet

Full PDF Text Transcription for K5A3340YBC-T755 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K5A3340YBC-T755. For precise diagrams, and layout, please refer to the original PDF.

K5A3x40YT(B)C Document Title Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision...

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ual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date November 6, 2002 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 November 2002 K5A3x40YT(B)C Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM F

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