K5A3380YBC-T755 Datasheet | Samsung Semiconductor

FEATURES - Power Supply voltage : 2.7V to 3.3V - Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 1,048,576 x 8 / 524,288 x 16 bit - Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns - Power Consumption (typical value) - Flash Read Current : 14 m A (@5MHz) Program/Erase Current : 15 m A Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 m A - SRAM Operating Current : 22 m A Standby Current : 0.5 µA - Secode(Security Code) Block : Extra 64KB Block (Flash) - Block Group Protection / Unprotection (Flash) - Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb - Flash Endurance : 100,000 Program/Erase Cycles Minimum - SRAM Data Retention : 1.5 V (min.) - Industrial Temperature : -40°C ~ 85°C - Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max.) Thickness GENERAL DESCRIPTION The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which bines 32Mbit Dual Bank Flash and 8Mbit f CMOS SRAM. The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit. The memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase and program capability. This device is capable of reading data from one bank while programming or erasing in the other bank with dual bank organization. The Flash memory performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is pleted for typically 0.7sec. The 8Mbit SRAM supports low data retention voltage for battery backup operation with low data retention current. The K5A3x80YT(B)C is suitable for the memory of mobile munication system to reduce mount area. This device is available in 69-ball TBGA Type package. BALL CONFIGURATION BALL DESCRIPTION Ball Name A0 to A18 Description Address Input Balls (mon) Address Input Balls (Flash Memory) Data...