K5A3380YBC-T755 - MCP MEMORY

This page provides the datasheet information for the K5A3380YBC-T755, a member of the K5A MCP MEMORY family.

Product Overview

Samsung semiconductor

Part number	K5A3380YBC-T755
Manufacturer	Samsung semiconductor
File Size	625.28 KB
Description	MCP MEMORY
Datasheet	K5A3380YBC-T755 Datasheet
Additional preview pages of the K5A3380YBC-T755 datasheet.

The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 8Mbit fCMOS SRAM.

The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit.

Power Supply voltage : 2.7V to 3.3V.
Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 1,048,576 x 8 / 524,288 x 16 bit.
Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns.
Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 22 mA Standby Current : 0.5 µA.
Secode(Security Code) B.

Other Datasheets by Samsung semiconductor

K5A3380YBC-T855 - MCP MEMORY
K5A3380YTC-T755 - MCP MEMORY
K5A3380YTC-T855 - MCP MEMORY
K5A3340YBC-T755 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3340YBC-T855 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3340YT - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3340YTC-T755 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3340YTC-T855 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

Published: Apr 7, 2005 |