• Part: K5A3X40YTC
  • Description: Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 867.47 KB
K5A3X40YTC Datasheet (PDF) Download
Samsung Semiconductor
K5A3X40YTC

Description

The K5A3x40YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which bines 32Mbit Dual Bank Flash and 4Mbit fCMOS SRAM.

Key Features

  • Power Supply voltage : 2.7V to 3.3V
  • Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns
  • Secode(Security Code) Block : Extra 64KB Block (Flash)
  • Block Group Protection / Unprotection (Flash)
  • Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
  • Flash Endurance : 100,000 Program/Erase Cycles Minimum
  • SRAM Data Retention : 1.5 V (min.)
  • Industrial Temperature : -40°C ~ 85°C
  • Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max.) Thickness