Samsung semiconductor K5A3X40YTC
The K5A3x40YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 4Mbit fCMOS SRAM. The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 4Mbit SRAM is organized as 512K x8 or 256K x16 bit. The memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase and program capability.| Part No. | K5A3X40YTC |
|---|---|
| Datasheet | K5A3X40YTC Download |
| Manufacturer |  Samsung semiconductor |
| Description | 4M(512Kx8/256Kx16) Full CMOS SRAM |
| Buy | Stock & Price |
FEATURES
● Power Supply voltage : 2.7V to 3.3V● Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 524,288 x 8 / 262,144 x 16 bit
● Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns
● Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 20 mA Standby Current : 0.5 µA
● Secode(Security Code) Block : Extra 64KB Block (Flash)
● Block Group Protection / Unprotection (Flash)
● Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
● Flash Endurance : 100,000 Program/Erase Cycles Minimum
● SRAM Data Retention : 1.5 V (min.)
● Industrial Temperature : -40°C ~ 85°C
● Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max.) Thickness
GENERAL DESCRIPTION
This device is capable of reading data from one bank while programming or erasing in the other bank with dual bank organization. The Flash memory performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block.
