K5P2880YCM Datasheet (Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM)

Part: K5P2880YCM
Manufacturer: Samsung Semiconductor
Size: 552.68 KB

K5P2880YCM Key Features

Power Supply voltage : 2.7V to 3.3 V
Organization
Flash : (16M + 512K)bit x 8bit
SRAM : 1M x 8 / 512K x 16 bit
Access Time
Flash : Random access : 10us(Max.), Serial read : 50ns(Min.)
SRAM : 85 ns
Power Consumption (typical value)
Flash Read Current : 10 mA(@20MHz) Program/Erase Current : 10 mA Standby Current : 10 µ A
SRAM Operating Current : 20 mA Standby Current : 0.5 µA

K5P2880YCM Description

The K5P2880YCM featuring single 3.0V power supply is a Multi ChipPackage Memory which bines 128Mbit Nand Flash and 8Mbit full CMOS SRAM. The 128Mbit Flash memory is organized as 16M x8 bit and the 8Mbit SRAM is organized as 1M x8 or 512K x16 bit. In 128Mb NAND Flash a 528-byte page program can be typically achieved within 300us and an 16K-byte block erase can be typically achieved within 2ms.