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K5P2880YCM Datasheet

Manufacturer: Samsung Semiconductor
K5P2880YCM datasheet preview

Datasheet Details

Part number K5P2880YCM
Datasheet K5P2880YCM_Samsungsemiconductor.pdf
File Size 552.68 KB
Manufacturer Samsung Semiconductor
Description Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
K5P2880YCM page 2 K5P2880YCM page 3

K5P2880YCM Overview

The K5P2880YCM featuring single 3.0V power supply is a Multi ChipPackage Memory which bines 128Mbit Nand Flash and 8Mbit full CMOS SRAM. The 128Mbit Flash memory is organized as 16M x8 bit and the 8Mbit SRAM is organized as 1M x8 or 512K x16 bit. In 128Mb NAND Flash a 528-byte page program can be typically achieved within 300us and an 16K-byte block erase can be typically achieved within 2ms.

K5P2880YCM Key Features

  • Power Supply voltage : 2.7V to 3.3 V
  • Organization
  • Flash : (16M + 512K)bit x 8bit
  • SRAM : 1M x 8 / 512K x 16 bit
  • Access Time
  • Flash : Random access : 10us(Max.), Serial read : 50ns(Min.)
  • SRAM : 85 ns
  • Power Consumption (typical value)
  • Flash Read Current : 10 mA(@20MHz) Program/Erase Current : 10 mA Standby Current : 10 µ A
  • SRAM Operating Current : 20 mA Standby Current : 0.5 µA
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