K5T6432YT - Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

Description

The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit Four Bank Flash and 32Mbit UtRAM.

The 64Mbit Flash memory is organized as 4M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit.

Features

Power Supply voltage : 2.7 to 3.3 V.
Organization - Flash : 4,194,304 x 16 bit - UtRAM : 2,097,152 x 16 bit.
Access Time (@2.7V) - Flash : 85 ns, UtRAM : 100 ns.
Power Consumption (typical value) - Flash Read Current : 20 mA (@5MHz) Sequential Page Read Current : 5 mA (@5MHz) Program/Erase Current : 35 mA (Max. ) Standby mode/Deep Power mode : 0.1 µA - UtRAM Operating Current : 18 mA Standby Current :120 µA Deep Power Down : 5 µA.
Secode(Security Code.

Samsung semiconductor

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Datasheet Details

Part number	K5T6432YT
Manufacturer	Samsung semiconductor
File Size	606.29 KB
Description	Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
Datasheet	K5T6432YT Datasheet
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K5T6432YT(B)M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM MCP MEMORY Revision History Revision No. History 1.0 Final Specification Draft Date Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 November 2001 K5T6432YT(B)M Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM MCP MEMORY FEATURES • Power Supply voltage : 2.7 to 3.

Published: Apr 7, 2005 |