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K5T6432YT Datasheet

Manufacturer: Samsung Semiconductor
K5T6432YT datasheet preview

Datasheet Details

Part number K5T6432YT
Datasheet K5T6432YT_Samsungsemiconductor.pdf
File Size 606.29 KB
Manufacturer Samsung Semiconductor
Description Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
K5T6432YT page 2 K5T6432YT page 3

K5T6432YT Overview

The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which bines 64Mbit Four Bank Flash and 32Mbit UtRAM. The 64Mbit Flash memory is organized as 4M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit. The 64Mbit Flash memory is the high performance non-volatile memory fabricated by CMOS technology for peripheral circuit and DINOR IV(Diveded bit-line NOR IV) architecture for the memory...

K5T6432YT Key Features

  • Power Supply voltage : 2.7 to 3.3 V
  • Organization
  • Flash : 4,194,304 x 16 bit
  • UtRAM : 2,097,152 x 16 bit
  • Access Time (@2.7V)
  • Flash : 85 ns, UtRAM : 100 ns
  • Power Consumption (typical value)
  • Flash Read Current : 20 mA (@5MHz) Sequential Page Read Current : 5 mA (@5MHz) Program/Erase Current : 35 mA (Max.) Stan
  • UtRAM Operating Current : 18 mA Standby Current :120 µA Deep Power Down : 5 µA
  • Secode(Security Code) Block : Extra 32KW Block (Flash)
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