K5T6432YT Datasheet (Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM)

Part: K5T6432YT
Manufacturer: Samsung Semiconductor
Size: 606.29 KB

K5T6432YT Key Features

Power Supply voltage : 2.7 to 3.3 V
Organization
Flash : 4,194,304 x 16 bit
UtRAM : 2,097,152 x 16 bit
Access Time (@2.7V)
Flash : 85 ns, UtRAM : 100 ns
Power Consumption (typical value)
Flash Read Current : 20 mA (@5MHz) Sequential Page Read Current : 5 mA (@5MHz) Program/Erase Current : 35 mA (Max.) Stan
UtRAM Operating Current : 18 mA Standby Current :120 µA Deep Power Down : 5 µA
Secode(Security Code) Block : Extra 32KW Block (Flash)

K5T6432YT Description

The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which bines 64Mbit Four Bank Flash and 32Mbit UtRAM. The 64Mbit Flash memory is organized as 4M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit. The 64Mbit Flash memory is the high performance non-volatile memory fabricated by CMOS technology for peripheral circuit and DINOR IV(Diveded bit-line NOR IV) architecture for the memory...