K6E0808C1E-C10 Overview
The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology.
K6E0808C1E-C10 Key Features
- Fast Access Time 10, 12, 15ns(Max.)
- Single 5.0V±10% Power Supply
- TTL patible Inputs and Outputs
- I/O patible with 3.3V Device
- Fully Static Operation
- No Clock or Refresh required
- Three State Outputs
- 2V Minimum Data Retention : L-Ver. only
- Standard