K6F1616T6B-EF55
FEATURES
- Process Technology: Full CMOS
- Organization: 1M x16
- Power Supply Voltage: 2.7~3.6V
- Low Data Retention Voltage: 1.5V(Min)
- Three State Outputs
- Package Type: 48-TSOP1-1220F, 48-TBGA
- 7.00x7.00
CMOS SRAM
GENERAL DESCRIPTION
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 5µA2) Operating (ICC1, Max) 5m A PKG Type 48-TSOP1-1220F 48-TBGA
- 7.00x7.00
K6F1616T6B-F
Industrial(-40~85°C)
2.7~3.6V
551)/70ns
1. The parameter is measured with 30p F test load. 2. Typical value is measured at VCC=3.3V, TA=25°C and not 100% tested.
PIN DESCRIPTION
A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE...
