K6F1616T6B-EF70 Key Features
- Process Technology: Full CMOS
- Organization: 1M x16
- Power Supply Voltage: 2.7~3.6V
- Low Data Retention Voltage: 1.5V(Min)
- Three State Outputs
- Package Type: 48-TSOP1-1220F, 48-TBGA
- 7.00x7.00
- 7.00x7.00
- Part: K6F1616T6B-EF70
- Manufacturer: Samsung Semiconductor
- Size: 199.14 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F1616T6B-EF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-F | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F1616T6B-EF70 Description
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.