Datasheet4U Logo Datasheet4U.com

K6F1616T6B-TF55 - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Download the K6F1616T6B-TF55 datasheet PDF. This datasheet also covers the K6F variant, as both devices belong to the same 1m x16 bit super low power and low voltage full cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges.

The families also support low data retention voltage for battery back-up operation with low data retention current.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 2.7~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6F-1616.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K6F1008R2M SRAM Samsung Electronics
K6F1008S2M SRAM Samsung Electronics
K6F1008V2M SRAM Samsung Electronics
K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM SAMSUNG Electronics

Other Datasheets by Samsung Semiconductor

Part Number Description
K6F1616T6B-TF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-F 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 August 2003 K6F1616T6B Family FEATURES • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.