Samsung semiconductor K6F3216T6M-F
The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.| Part No. | K6F3216T6M-F |
|---|---|
| Datasheet | K6F3216T6M-F Download |
| Manufacturer |  Samsung semiconductor |
| Description | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| Buy | Stock & Price |
FEATURES
● Process Technology: Full CMOS● Organization: 2M x16
● Power Supply Voltage: 2.7~3.6V
● Low Data Retention Voltage: 1.5V(Min)
● Three State Outputs
● Package Type: 55-TBGA-7.50x12.00 CMOS SRAM
GENERAL DESCRIPTION
2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F3216T6M-F Operating Temperature Industrial(-40~85°C) Vcc Range 2.7~3.6V Speed 551)/70ns Standby (ISB1, Max.) 40µA Operating (ICC1, Max) 7mA PKG Type 55-TBGA-7.50x12.00 1. The parameter is measured with 30pF test load. PINDESCRIPTION
1 2 3 4 5 6 7 8 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A B C D E F G H J K L M N.C N.C Vcc Vss Row Addresses N.C LB OE A0 A1 A2 CS2 Row select Memory Cell Array I/O9 UB A3 A4 CS1 I/O1 I/O10 I/O11 A5 A6 I/O2 I/O3 I/O1~I/O8 Vss I/O12 A17 A7 I/O4 Vcc Data cont Data cont Data cont I/O Circuit Column select Vcc I/O13 N.C A16 I/O5 Vss I/O9~I/O16 I/O15 I/O14 A14 A15 I/O6 I/O7 I/O16 A19 A12 A13 WE I/O8 Column Address...
