K6F4016R4E-F Key Features
- Process Technology: Full CMOS
- Organization: 256K x16 bit
- Power Supply Voltage: 1.65~2.20V
- Low Data Retention Voltage: 1.0V(Min)
- Three State Outputs
- Package Type: 48-TBGA-6.00x7.00
K6F4016R4E-F is 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM manufactured by Samsung Semiconductor.
The K6F4016R4E families are fabricated by SAMSUNG′s advan.