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K6F4016R4E-F Datasheet 256k X16 Bit Super Low Power And Low Voltage Full CMOS Static Ram

Manufacturer: Samsung Semiconductor

Overview: K6F4016R4E Family CMwwOw.SDatSaSRheAet4MU. Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize Draft Date Remark November 10, 2000 Preliminary March 12, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.0 March 2001 K6F4016R4E Family CMwwOw.SDatSaSRheAet4MU.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The K6F4016R4E families are fabricated by SAMSUNG′s advan

Key Features

  • Process Technology: Full CMOS.
  • Organization: 256K x16 bit.
  • Power Supply Voltage: 1.65~2.20V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00.

K6F4016R4G from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
SAMSUNG Electronics K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM SAMSUNG Electronics

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