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K6F4016U4G

Manufacturer: Samsung Semiconductor

K6F4016U4G datasheet by Samsung Semiconductor.

K6F4016U4G datasheet preview

K6F4016U4G Datasheet Details

Part number K6F4016U4G
Datasheet K6F4016U4G_Samsungsemiconductor.pdf
File Size 155.08 KB
Manufacturer Samsung Semiconductor
Description 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G page 2 K6F4016U4G page 3

K6F4016U4G Overview

The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.

K6F4016U4G Key Features

  • Preliminary CMOS SRAM
  • 2Revision 0.0 October 2003
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K6F4016U4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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K6F4016U6G-F 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008R2C 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2G 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1008V2C 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM

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