K6R1008C1A-I12 Datasheet | Samsung Semiconductor

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at mercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary Update D.C parameters. 2.1. Update D.C parameters Previous spec. ITEMS (12/15/17/20ns part) ICC 200/190/180/170m A ISB 30m A ISB1 10m A Draft Data Apr. 22th, 1995 Feb. 29th, 1996 Remark Preliminary Final Rev. 2.0 Jul. 16th, 1996 Updated spec. (12/15/17/20ns part) 170/165/165/160m A 25m A 8m A Jun. 2nd, 1997 Final Rev. 3.0 Add Industrial Temperature Range parts and 300mil-SOJ PKG. 3.1. Add 32-Pin 300mil-SOJ Package. 3.2. Add Industrial Temperature Range parts with the same parameters as mercial Temperature Range parts. 3.2.1. Add K6R1008C1A parts for Industrial Temperature Range. 3.2.2. Add ordering information. 3.2.3. Add the condition for operating at Industrial Temp. Range. 3.3. Add the test condition for VOH1 with VCC=5V±5% at 25°C 3.4. Add timing diagram to define t WP as ″(Timing Wave Form of Write Cycle(CS=Controlled)″ 4.1. Delete 17ns Part Final Rev. 4.0 Feb. 25th, 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 4.0 February 1998 PRELIMINARY K6R1008C1A-C, K6R1008C1A-I 128K x 8 Bit High-Speed CMOS Static RAM Features - Fast Access Time 12, 15, 20ns(Max.) - Low Power Dissipation Standby (TTL) : 25m A(Max.) (CMOS) : 8m A(Max.) Operating K6R1008C1A-12 : 170m A(Max.) K6R1008C1A-15 : 165m A(Max.) K6R1008C1A-20 : 160m A(Max.) - Single 5.0V±10% Power Supply - TTL patible Inputs and Outputs -...