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K6R1008C1C-C12 Datasheet

Manufacturer: Samsung Semiconductor
K6R1008C1C-C12 datasheet preview

K6R1008C1C-C12 Details

Part number K6R1008C1C-C12
Datasheet K6R1008C1C-C12_Samsungsemiconductor.pdf
File Size 131.65 KB
Manufacturer Samsung Semiconductor
Description 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-C12 page 2 K6R1008C1C-C12 page 3

K6R1008C1C-C12 Overview

The K6R1008C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1C uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology.

K6R1008C1C-C12 Key Features

  • Fast Access Time 10,12,15ns(Max.)
  • Single 5.0V±10% Power Supply
  • TTL patible Inputs and Outputs
  • I/O patible with 3.3V Device
  • Fully Static Operation
  • No Clock or Refresh required
  • Three State Outputs
  • 2V Minimum Data Retention: L-ver. only
  • Center Power/Ground

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