K6R1008V1D Overview
The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1D uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ′s advanced CMOS process and designed for high-speed circuit technology.
K6R1008V1D Key Features
- Fast Access Time 8,10ns(Max.)
- Single 3.3±0.3V Power Supply
- TTL patible Inputs and Outputs
- Fully Static Operation
- No Clock or Refresh required
- Three State Outputs
- Center Power/Ground