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K6R4004C1C-E - 1Mx4 Bit High Speed Static RAM

Download the K6R4004C1C-E datasheet PDF. This datasheet also covers the K6R4004C1C-C variant, as both devices belong to the same 1mx4 bit high speed static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6R4004C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits.

The K6R4004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Key Features

  • Fast Access Time 10,12,15,20ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 60mA(Max. ) (CMOS) : 10mA(Max. ) Operating K6R4004C1C-10 : 160mA(Max. ) K6R4004C1C-12 : 150mA(Max. ) K6R4004C1C-15 : 140mA(Max. ) K6R4004C1C-20 : 130mA(Max. ).
  • Single 5.0V ±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6R4004C1C-C_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K6R4008C1C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-E 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-I 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4016C1D CMOS SRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K6R4004C1C-C 1Mx4 Bit High Speed Static RAM
K6R4004C1C-I 1Mx4 Bit High Speed Static RAM
K6R4004C1D 1Mx4 Bit High Speed Static RAM
K6R4004V1D 1Mx4 Bit High Speed Static RAM
K6R4004V1D 1Mx4 Bit High Speed Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part.