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K6R4008V1B Datasheet 512k X8 Bit High Speed Static Ram

Manufacturer: Samsung Semiconductor

Overview: www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Add 30pF capacitive in test load. 2.3. Relax DC characteristics. Item Previous ICC 10ns 170mA 12ns 160mA 15ns 150mA ISB f=max. 40mA ISB1 f=0 10 / 1mA IDR VDR=3.0V 0.9mA Draft Data Jan. 1st, 1997 Jun. 1st, 1997 Remark Design Target Preliminary Rev. 2.0 Feb.11th.1998 Final Current 205mA 200mA 195mA 50mA 10 / 1.2mA 1.0mA Jun.27th 1998 Final Rev. 2.1 Change operating current at Industrial Temperature range. Previous spec. Changed spec. Items (10/12/15ns part) (10/12/15ns part) Icc 205/200/195mA 230/225/220mA Add 44 pins plastic TSOP(II) forward Package. Rev. 2.2 May. 4th 1999 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 2.2 May 1999 www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P 512K x 8 Bit High-Speed CMOS Static RAM(3.

Key Features

  • Fast Access Time 10,12,15ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 10mA(Max. ) 1.2mA(Max. )- L-Ver. Operating K6R4008V1B-10 : 205mA(Max. ) K6R4008V1B-12 : 200mA(Max. ) K6R4008V1B-15 : 195mA(Max. ).
  • Single 3.3 ±0.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • 2V Minimum Data Retention ; L-Ver. only.
  • Center Power/Ground Pin C.

More Datasheets from Samsung Semiconductor

Part Number Description
K6R4008V1B-C 512K x8 Bit High Speed Static RAM
K6R4008V1B-I 512K x8 Bit High Speed Static RAM
K6R4008V1B-L 512K x8 Bit High Speed Static RAM
K6R4008V1B-P 512K x8 Bit High Speed Static RAM
K6R4008V1C 512Kx8 Bit High Speed Static
K6R4008V1D 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008C1D 512K x8 Bit High Speed Static RAM
K6R4004C1C-C 1Mx4 Bit High Speed Static RAM
K6R4004C1C-E 1Mx4 Bit High Speed Static RAM
K6R4004C1C-I 1Mx4 Bit High Speed Static RAM

K6R4008V1B Distributor