Samsung semiconductor K6T8016C3M
The K6T8016C3M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.| Part No. | K6T8016C3M |
|---|---|
| Datasheet | K6T8016C3M Download |
| Manufacturer |  Samsung semiconductor |
| Description | 512Kx16 bit Low Power CMOS Static RAM |
| Buy | Stock & Price |
MAXIMUM RATINGS
’from 7.0V to VCC+0.5V. Errata correction Draft Date June 18, 1999 February 29, 2000 Remark Advance Final 1.01 April 17, 2000 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.01 April 2000 K6T8016C3M Family 512Kx16 bit Low Power CMOS Static RAMFEATURES
● Process Technology: TFT● Organization: 512K x16
● Power Supply Voltage: 4.5~5.5V
● Low Data Retention Voltage: 2.0V(Min)
● Three state output and TTL Compatible
● Package Type: 44-TSOP2-400F/R CMOS SRAM
GENERAL DESCRIPTION
PRO DUCT FAMILY Power Dissipation Product Family K6T8016C3M-B K6T8016C3M-F Operating Temperature Commercial(0~70°C) Industrial(-40~85 °C) Vcc Range Speed Standby (ISB1, Max) 50µA 80µA Operating (ICC2, Max) 90mA PKG Type 4.5~5.5V 551)/70ns 44-TSOP2-400F/R 1.
