K6T8016C3M Key Features
- Process Technology: TFT
- Organization: 512K x16
- Power Supply Voltage: 4.5~5.5V
- Low Data Retention Voltage: 2.0V(Min)
- Three state output and TTL patible
- Package Type: 44-TSOP2-400F/R
- Part: K6T8016C3M
- Manufacturer: Samsung Semiconductor
- Size: 143.37 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6T8008C2M | 1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T0808C1D | CMOS SRAM |
| K6T0808U1D | CMOS SRAM |
| K6T0808V1D | CMOS SRAM |
| K6T1008C2C | CMOS SRAM |
K6T8016C3M Description
The K6T8016C3M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.