K6X0808C1D Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	K6X0808C1D
Datasheet	K6X0808C1D K6X Datasheet (PDF)
File Size	166.63 KB
Manufacturer	Samsung Semiconductor
Description	32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Overview

The K6X0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6X0808C1D Key Features

Process Technology: Full CMOS
Organization: 32K x 8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL patible
Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R
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More Datasheets from Samsung Semiconductor

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Part Number	Description
K6X0808T1D	32Kx8 bit Low Power CMOS Static RAM
K6X1008C2D	128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D	128Kx8 bit Low Power CMOS Static RAM
K6X4008C1F	512Kx8 bit Low Power full CMOS Static RAM
K6X4008T1F	512K x 8 bit Low Power and Low Voltage CMOS Static RAM
K6X4016C3F	256Kx16 bit Low Power full CMOS Static RAM
K6X4016T3F	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B	1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008T2B	CMOS SRAM
K6X8016C3B	512Kx16 bit Low Power Full CMOS Static RAM

Datasheet Details

K6X0808C1D Overview

K6X0808C1D Key Features

More Datasheets from Samsung Semiconductor

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