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K6X0808C1D - 32Kx8 bit Low Power CMOS Static RAM

Download the K6X0808C1D datasheet PDF. This datasheet also covers the K6X variant, as both devices belong to the same 32kx8 bit low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6X0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support verious operating temperature ranges and have various package types for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 32K x 8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R CMOS SRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6X-0808.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K6X0808C1D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6X0808C1D. For precise diagrams, and layout, please refer to the original PDF.

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10...

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sion No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X0808C1D-F 15µA to 10µA - Changed IDR for K6X0808C1D-Q 25µA to 20µA - Errata correction Draft Data October 09, 2002 December 16, 2003 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1

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