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K7A161831B Datasheet 18mb B-die Sync Sram Specification 100tqfp With Pb / Pb-free

Manufacturer: Samsung Semiconductor

Overview: K7A163631B K7A161831B .. 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Synchronous Operation.
  • 2 Stage Pipelined operation with 4 Burst.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • VDD= 2.5 or 3.3V +/- 5% Power Supply.
  • 5V Tolerant Inputs Except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • Power Down State via ZZ Signal.
  • LBO Pin allows a choice of either a interleaved burst.

More Datasheets from Samsung Semiconductor

Part Number Description
K7A161800A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A161801A 512K x 36 / 32 & 1M x 18 Synchronous SRAM
K7A163200A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A163200A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A163201A 512K x 36 / 32 & 1M x 18 Synchronous SRAM
K7A163600A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A163601A 512K x 36 / 32 & 1M x 18 Synchronous SRAM
K7A163631B 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE
K7A201800B 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A203200A 64Kx32-Bit Synchronous Pipelined Burst SRAM

K7A161831B Distributor